Appeal No. 2002-0003 Application No. 09/056,794 12. A process of production of a semiconductor memory device having a memory array including memory cells and a peripheral circuit on one substrate comprising: forming an interlayer insulating layer covering said memory array and peripheral circuit; forming said memory cells; exposing a surface of diffusion regions in the peripheral circuit after forming said memory cells; forming a covering conductive layer on the exposed surface of the diffusion regions in the peripheral circuit; and flattening by chemical mechanical polishing. The prior art of record relied upon by the examiner in rejecting the appealed claims is as follows: Suwanai et al. (Suwanai) 5,025,741 Jun. 25, 1991 Iijima et al. (Iijima) 5,903,053 May 11, 1999 Claims 11-18 stand rejected under 35 U.S.C. § 103 as being unpatentable over Suwanai in view of Iijima. 2Page: Previous 1 2 3 4 5 6 NextLast modified: November 3, 2007