Appeal No. 2002-0128
Application No. 08/878,588
integratedly forming thin film transistors, each
transistor including the semiconducting thin film as an
active layer, with a specific arrangement pitch in the
lateral direction;
wherein said laser annealing step further comprises a
step of moving the laser beam relative to the insulating
substrate in the lateral direction with a specific movement
pitch to form a partially overlapping region between
adjacent region irradiated with the laser beam, the movement
pitch between pulses of the laser beam being set at a value
equal to an arrangement pitch of the active layer of the
thin film transistors or at a value larger by a factor of an
integer than the arrangement pitch of the active layer of
the thin film transistors and positioning the substrate
before the annealing step so that the overlapping region
will be between the active layers of the thin film
transistors.
The Examiner relies on the following prior art:
Chae 5,432,122 Jul. 11, 1995
Claims 1-6 and 17-22, all of the pending claims, stand
finally rejected under 35 U.S.C. § 103(a) as being unpatentable
over Chae.
Rather than reiterate the arguments of Appellants and the
Examiner, reference is made to the Briefs1 and Answer for their
respective details.
1 The Appeal Brief was filed March 12, 2001 (Paper No. 18). In response to
the Examiner’s Answer dated May 18, 2001 (Paper No. 19), a Reply Brief was
filed July 23, 2001 (Paper No. 21), which was acknowledged and entered by the
Examiner as indicated in the communication dated July 27, 2001 (Paper No. 22).
3
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