Appeal No. 2002-1169
Application No. 09/252,845
The disclosed invention relates to an ion source in an ion
implantation system. A source of electrical power in the ion
source is connectable to an electron source to cause the electron
source to create charged ions in a source gas to form a charged
plasma and to bias the electron source to cause cleansing of a
non-dopant component of the source gas by inert gas ion
sputtering of the electron source.
Claim 1 is illustrative of the claimed invention, and it
reads as follows:
1. For an ion implantation system, an ion source
comprising:
a gas source for providing a source gas containing an
ion implantation dopant gas and an inert gas;
an electron source surroundable by said source gas and
subject to coating by a non-dopant component of
said source gas;
a source of electrical power connectable to said
electron source to cause said electron source to
create charged ions in said source gas to form a
charged plasma and to bias said electron source to
cause cleansing of said non-dopant component of
said source gas by inert gas ion sputtering of
said electron source; and
an ion extraction system for controlling charged ions
from said charged plasma.
2
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