Appeal No. 2002-1416
Application No. 09/146,519
18. A method of filling a surface discontinuity in a
semiconductor product, said method comprising the steps of:
depositing conductive material over said surface
discontinuity;
subsequently, applying an explosive force to said conductive
material; and
deforming said conductive material into said surface
discontinuity, and wherein the deformation of said conductive
material into said surface discontinuity is caused by the
application of said explosive force.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Cranston 3,737,986 Jun. 12, 1973
Dobson 5,527,561 Jun. 18, 1996
Jeffryes et al. (Jeffryes) 5,575,850 Nov. 19, 1996
Claims 2 through 9, 11, and 18 through 20 stand rejected
under 35 U.S.C. § 103 as being unpatentable over Dobson in view
of Cranston.
Claims 12 through 15 stand rejected under 35 U.S.C. § 103 as
being unpatentable over Dobson in view of Cranston and Jeffryes.
Reference is made to the Examiner's Answer (Paper No. 20,
mailed March 11, 2002) for the examiner's complete reasoning in
support of the rejections, and to appellant's Brief (Paper
No. 19, filed December 26, 2001) and Reply Brief (Paper No. 22,
filed May 13, 2002) for appellant's arguments thereagainst.
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