Appeal No. 2002-1642
Application 09/300,563
DISCUSSION
Fukuda discloses “a method and apparatus for processing a
substrate by use of plasma, and particularly to a technique that
is suitable for a microwave plasma CVD [chemical vapor
deposition] apparatus for forming a thin film on a substrate”
(column 1, lines 6 through 9). As described in the reference,
FIG. 2 shows the cross section of the principal
portions of the microwave plasma processing apparatus
based on the first embodiment of this invention. The
apparatus comprises a vacuum chamber 5 having a window
4 which transmits a microwave 3, a cylindrical
substrate holder 2 disposed at the bottom of the vacuum
chamber beneath the window 4, reactive gas conduits 6
and 7 for feeding substrate processing gases into the
vacuum chamber, a cleaning gas conduit 8 for feeding a
cleaning gas into the vacuum chamber, a gas evacuation
port 9 formed in the wall of the vacuum chamber, an
electromagnetic winding 10 disposed near the window 4
outside the vacuum chamber 5 for producing a magnetic
field in the vacuum chamber, and a high-frequency power
source 12 connected to the substrate holder 2.
. . .
This apparatus was used to form a SiO2 film on the
substrate 1 by feeding SiH4 gas at 20 ml/min and O2 gas
at 200 ml/min into the vacuum chamber 5 through the
reactive gas conduits 6 and 7, evacuating the vacuum
chamber to 0.3 Pa, applying a magnetic flux at a flux
density of 875 gauss or more produced by the
electromagnetic winding in a direction substantially
normal to the substrate, and applying a microwave of
600 W. After microwave application of five minutes, a
SiO2 film with a thickness of 1 µm was formed on the
substrate. . . .
After the substrate 1 with the SiO2 film being
formed thereon was taken out, the vacuum chamber was
cleaned (etched) by feeding C2F6 gas through the
cleaning gas conduit 8 in place of the reactive gases
previously fed through reactive gas conduits 7 and 8
3
Page: Previous 1 2 3 4 5 6 7 8 Next
Last modified: November 3, 2007