Appeal No. 2003-0642
Application No. 09/382,584
placing said substrate containing said layer of material
with said defined etching pattern into a reactive chamber;
introducing an etching gas into said chamber;
providing a power to said substrate to induce an etching
plasma in said gas which etches said opening in said layer of
material; and
changing the operating parameters of said reactive chamber
during etching of the opening in said layer of material, such
that material is deposited at a first position of said opening
which has a first aspect ratio while a second position of said
opening having a second aspect ratio is continuously etched,
wherein said first aspect ratio is different from said second
aspect ratio.
The examiner relies upon the following references as
evidence of obviousness:
Nulty et al. (Nulty) 5,468,342 Nov. 21, 1995
Hashemi et al. (Hashemi) 5,478,437 Dec. 26, 1995
Appealed claims 1-35, 75 and 76 stand rejected under
35 U.S.C. § 112, first paragraph, enablement requirement. Claims
75 and 76 stand rejected under 35 U.S.C. § 112, first paragraph,
description requirement. In addition, claims 1-35, 75 and 76
stand rejected under 35 U.S.C. § 103 as being unpatentable over
Nulty in view of Hashemi.
We have thoroughly reviewed the respective positions
advanced by appellants and the examiner. In so doing, we find
that the examiner's rejections under § 112, first paragraph, and
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