Ex Parte Wagner et al - Page 7




          Appeal No. 2003-1021                                                        
          Application 09/507,507                                                      



          the material composition of the body vary along a gradient.  See            
          Examiner’s Answer, page 8.  We are in agreement with appellants             
          that in reaching his conclusion of inherency, the examiner                  
          incorrectly interprets the language relating to the gradient as a           
          property or function rather than a structural limitation.  See              
          Appeal Brief,  pages 21-32.  More specifically, the present                 
          claims require a variation in the “material composition” of the             
          body.  Although Gondusky may utilize the same metals for his                
          layers, he does not disclose or suggest varying the composition             
          of the layers along a gradient.  Accordingly, we cannot agree               
          with the examiner’s conclusion that Gondusky’s device inherently            
          meets the claim language relating to varying the material                   
          composition of the body.                                                    
                    We further note that Gondusky fails to specify the                
          claimed relationships between the coefficients of thermal                   
          expansion for the heat sink, body and intermediate region, and              
          for the thermal conductivities of the heat sink, body and                   
          intermediate region (see claims 1, 9, 16, 17 and 19).  Rather,              
          Gondusky merely requires that                                               
                    the first component 28 comprises a material                       
                    of relatively low coefficient of thermal                          
                    expansion substantially corresponding to the                      
                    coefficient of expansion of the semiconductor                     

                                          7                                           





Page:  Previous  1  2  3  4  5  6  7  8  9  10  11  12  Next 

Last modified: November 3, 2007