Appeal No. 2003-1206
Application No. 09/773,063 Page 2
a conductor core filling, with a capping layer disposed over the
interconnect cap. An understanding of the invention can be
derived from a reading of exemplary claim 1, which is reproduced
below.
1. An integrated circuit comprising:
a semiconductor substrate having a semiconductor device
provided thereon;
a dielectric layer formed on the semiconductor substrate
having an opening provided therein;
a conductor core filling the opening and connected to the
semiconductor device;
a barrier metal oxide interconnect cap disposed over the
conductor core and recessed in the opening in the dielectric
layer; and
a capping layer disposed over the barrier metal oxide
interconnect cap.
In addition to alleged admitted prior art, the prior art
references of record relied upon by the examiner in rejecting the
appealed claims are:
Hong et al. (Hong) 6,077,774 Jun. 20, 2000
Liu et al. (Liu) 6,181,013 Jan. 30, 2001
(filed Mar. 13, 2000)
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