Appeal No. 2003-1208
Application 09/590,805
operating voltage of the magnetoresistive sensor element can be
produced by doping thermally-deposited polysilicon, and that the
voltage at which the diodes conduct can be raised by using a
plurality of them in series or by laser recrystallizing the
polysilicon before it is doped (col. 10, lines 26-45).
The examiner argues that “Murdock et al. teach in figure 2
and related text an integrated circuit comprising a first
device 30c (figure 3c) and a second device 34 (column 10,
lines 26-29) electrically connected to one another (figure 2c)
wherein the effective threshold voltage of the first device 30c
is more susceptible to be lowered by ionizing radiation than is
the effective threshold voltage of the second device 34
(column 10, lines 26-45)” (answer, page 5).
Murdock’s component 30c is a circuit configuration for a
diode assembly (30), comprising two pluralities of diodes (70 and
72) connected in parallel across electrical conductors (18a and
18b) and between a magnetoresistive sensor element (34) and
detection circuitry (16) (col. 7, lines 6-18; figure 3c). Thus,
Murdock’s 30c and 34 cannot be first and second devices as argued
by the examiner because component 34 is part of circuit
configuration 30c. Also, Murdock’s circuit configuration 30c and
magnetoresistive sensor element 34 are not devices, as that term
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