Appeal No. 2003-1299
Application No. 09/443,443
Claims 1, 5, 8, and 30 are representative of the subject
matter on appeal and are set forth below:
1. A method of forming a semiconductor device,
comprising:
forming a first interconnect level over a
semiconductor substrate;
forming an uppermost interconnect level that includes
an interconnect portion and a bond pad over the first
interconnect level, wherein:
the interconnect portion contacts the first
interconnect level by way of vias through an interlevel
dielectric layer, and wherein all vias interconnecting the
interconnect portion and the first interconnect level are
positioned outside regions directly below the bond pad;
forming a passivation layer over the uppermost
interconnect level;
removing portions of the passivation layer, wherein
removing portions of the passivation layer exposes portions
of the bond pad and forms a plurality of support structures
overlying the uppermost surface of the bond pad; and
forming a conductive capping layer overlying the
plurality of support structures, wherein the conductive
capping layer electrically contacts the bond pad.
5. The method of claim 1, wherein the plurality of
support structures are interconnected with unremoved
portions of the passivation layer.
8. The method of claim 1, further comprising forming a
barrier layer between the capping layer and the bond pad,
wherein the barrier layer overlies the support structures
and abuts exposed portions of the bond pad.
30. The method of claim 29, wherein the conductive
film is further characterized as an aluminum film.
On page 6 of the brief, appellants group the claims as set
forth therein. In accordance there with, we consider claims 1,
5, 8, and 30 in this appeal.
Claims 1-5, 10, 24-27, 30, and 32 stand rejected under
35 U.S.C. § 103 as being unpatentable over the combination of
Freeman and Lien.
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