Appeal No. 2003-1260 Page 2
Application No. 09/850,654
INTRODUCTION
The claims are directed to a semiconductor device. Claims 1, 8, and 13 are illustrative:
1. A semiconductor device having a device layer, the semiconductor device comprising:
a via in the device layer of the semiconductor device;
a barrier layer over the device layer and in the via;
metallic material disposed in the via;
a conductive structure formed over the device layer and in contact with the metallic
material, the conductive structure having a sidewall extending from a surface of the barrier layer;
a spacer on the sidewall of the conductive structure; and
wherein the metallic material in the via is protected by a spacer on the sidewall of the
conductive structure during a removal of a portion of a conducting barrier adjacent to the via and
over the device layer.
8. The semiconductor device of claim 7, wherein the metal layer comprises an aluminum
alloy.
13. A semiconductor device having a via in a device layer, a barrier layer over the device
layer and in the via and metallic material disposed in the via, the semiconductor device
comprising:
a conductive structure formed over the device layer and in contact with the metallic
material, the conductive structure having at least one sidewall extending from a surface of the
metallic material;
a spacer on the sidewall of the conductive structure; and
wherein the metallic material in the via is protected by a spacer on the sidewall of the
conductive structure during a removal of a portion of a conducting barrier adjacent to the via and
over the device layer.
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