Appeal No. 2003-2138
Application No. 09/710,314
Appellants’ invention relates to a method for making a semiconductor device
using a nickel film for stopping etching. An understanding of the invention can be
derived from a reading of exemplary claim 6, which is reproduced below.
6. A method for making a film circuit comprising:
a step of forming wiring films on a nickel film for stopping etching as
an underlying layer by plating using a mask film, the mask being
selectively formed on a front surface of a metal substrate;
a step of forming a base comprising an insulating resin and having
electrode-forming holes on the front surface of the metal substrate such
that at least parts of the wiring films are partly exposed; and
a step of etching at least the region of the metal substrate, in which
the wiring films are formed, from the back surface until the nickel film for
stopping etching is exposed.
The prior art of record relied upon by the examiner in rejecting the appealed
claims is as follows:
Fukutomi et al. (Fukutomi) 5,976,912 Nov. 2, 1999
Claims 6-10 stand rejected under 35 U.S.C. § 102 as being anticipated by
Fukutomi.
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