Appeal No. 2004-0016
Application No. 09/496,081
a bottom capacitor plate consisting essentially of amorphous
TiN;
a layer of dielectric material overlying said bottom
capacitor plate; and
a top capacitor plate over lying [sic, overlying] said layer
of dielectric material
The examiner relies upon the following references as
evidence of obviousness:
Gonzalez et al. (Gonzalez) 5,168,073 Dec. 01, 1992
Sandhu et al. (Sandhu) 5,335,138 Aug. 02, 1994
Lee et al. (Lee) 2,245,762 Jan. 01, 1992
(United Kingdom Patent Application)
Appellant's claimed invention is directed to a capacitor in
a semiconductor device wherein the capacitor comprises, inter
alia, a bottom capacitor plate consisting essentially of
amorphous TiN. According to appellant, "[t]he capacitor will
function as a storage capacitor for a semiconductor device and
particularly for a dynamic random access memory device" (page 2
of principal brief, paragraph five).
Appealed claims 32, 36, 39 and 43 stand rejected under
35 U.S.C. § 103 as being unpatentable over Gonzales in view of
Lee. Claims 37, 38, 44 and 45 stand rejected under 35 U.S.C.
§ 103 as being unpatentable over Gonzales in view of Lee and
Sandhu.
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