Appeal No. 2004-0621
Application No. 09/193,193
includes a conductive layer, and the insulator is separated from
this conductive layer by a gap (Brief, page 3). Appellants state
that this gap is formed by removal of a portion of a barrier layer
disposed between the conductive layer and the insulator, while the
conductive line is physically detached from the insulator and thus
is capable of being removed by lifting off the conductive layer
(id.). Representative independent claim 8 is reproduced below:
8. A semiconductor device that is at least partially
deprocessed, the semiconductor device comprising:
at least one conductive line including a conductive layer; and
an insulator surrounding a portion of the conductive line, the
insulator being separated from the conductive layer by a gap, the
gap being formed by removal of a portion of a barrier layer
disposed between the conductive layer and the insulator, the
portion of the barrier layer being removed by exposing a second
portion of the barrier layer by removing a portion of the
insulator; and
etching the portion barrier layer after the portion of the
insulator is removed; and
wherein the conductive line is physically detached from the
insulator and is capable of being removed by lifting off the
conductive layer.
The examiner relies on Grill et al. (Grill), U.S. Patent No.
5,869,880, issued on Feb. 9, 1999 (filed Mar. 13, 1996), as the
sole evidentiary basis for the rejections on appeal (Answer, page
3). Claims 8 and 10-15 stand rejected under 35 U.S.C. § 102(e) as
anticipated by Grill (Answer, page 4). Claim 9 stands rejected
2
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