Appeal No. 2004-0627
Application No. 09/766,965
a first region of a second conductivity type formed in the
substrate and having a contact region for electrically coupling
to the channel;
a second region of the first conductivity type formed within
the first region between the contact region and the channel; and
a field oxide region formed between the second region and
the contact region.
The examiner relies upon the following reference in the
rejection of the appealed claims:
Williams et al. 5,156,989 Oct. 20, 1992
(Williams)
Appellants' claimed invention is directed to a high voltage
MOS device which has a high voltage breakdown and low on-state
resistance. The device comprises, inter alia, a field oxide
region (122) formed between a region (108) having the same
conductivity type as the substrate, which region is in another
region (113) of a second conductivity type, and a contact region
(106, 120). According to appellants, field oxide layer 122
consumes portions of the underlying layer 108 which results in
non-uniform doping concentrations throughout layer 108 "that
provides higher breakdown voltage and allows for lower on-state
resistance" (page 3 of Brief, third paragraph).
Appealed claims 1-9 stand rejected under 35 U.S.C. § 102(b)
as being anticipated by Williams.
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