Appeal No. 2004-0657
Application No. 09/845,604
The subject matter on appeal relates to a method of
fabricating a double-gate vertical channel MOSFET, having separate
gates, on a substrate. The method comprises forming a silicon-
insulator stack wherein a silicon fin is capped with insulation,
insulating the vertical surfaces of the silicon fin and forming
separate gate electrodes on opposing sides of the silicon fin.
This appealed subject matter is adequately illustrated by
independent claim 1 which reads as follows:
1. A method of fabricating a double-gate vertical channel
MOSFET, having separate gates, on a substrate, comprising:
forming a silicon-insulator stack wherein a silicon fin is
capped with insulation;
insulating the vertical surfaces of the silicon fin; and
forming separate gate electrodes on opposing sides of the
silicon fin, wherein conventional process steps may be thereafter
utilized to form the contacts and complete fabrication of the
double-gate vertical MOSFET transistor.
The reference set forth below is relied upon by the Examiner
in the § 102 and § 103 rejections before us:
Muller et. al (Muller) 6,252,284 June 26, 2001
(Filed Dec. 9, 1999)
Claims 1-3, 5, 7-11, 13, 14 and 16 stand rejected under
35 U.S.C. § 102(e) as being anticipated by Muller.
Claims 4, 6, 12 and 15 stand rejected under 35 U.S.C.
§ 103(a) as being unpatentable over Muller.
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