Appeal No. 2004-1886
Application No. 10/117,613
13. A method of fabricating an interconnect line
on a contact in a semiconductor device comprising the
steps of:
forming a contact of a first metallic material,
forming an alloy film by a self-aligned method to
substantially cover said contact, said alloy film is
capable of substantially preventing said contact from
being etched by an etchant in a process for forming
said interconnect line, and
forming said interconnect line of a second
metallic material to at least partially cover said
alloy film sufficient to provide electrical
communication between said contact and said
interconnect line.
On page 4 of the brief, appellants state that claims 13-14
and 16-18 stand as a group. Accordingly, we select claim 13 as
representative of the claims on appeal. 37 CFR § 1.192(c)(7)
and (8)(2003).
Claims 13, 14, and 16-18 stand rejected under 35 U.S.C.
§ 103 as being unpatentable over Kasahara in view of Gambino.
The examiner relies upon the following references as
evidence of unpatentability:
Gambino 5,256,597 Oct. 6, 1993
Kasahara1 60-245252 Dec. 5, 1985
(Japanese Patent Publication)
We have carefully reviewed appellants’ brief, the
examiner’s answer, and the applied references. This review has
led us to review conclude that the examiner’s rejection is well
founded.
OPINION
On page 6 of the brief, appellants point out that
independent claim 13 recites, inter alia, “forming an alloy film
by a self-aligned method to substantially cover said contact,
said alloy film is capable of substantially preventing said
contact from being etched”, and “forming said interconnect line
of a second metallic material to at least partially cover said
2
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