Appeal No. 2004-1888
Application No. 09/477,126
on the finding that the combined teachings of Chiang,
et al. and Sugahara provide a reasonable expectation of
success for using silicon carbide as an etch stop layer
adjacent spin-on glass dielectric layers generally as
taught by Chiang, et al. including the particular spin-
on glass dielectric layer of Sugahara [Request, page
2].
More specifically, it is the appellants’ contention that:
The Board errs in finding that Chiang, et al. suggests
that each etch stop layer is suitable for each
dielectric layer. Chiang et al. does not suggest which
etch stop layers are suitable for spin-on glass layers.
The only specific combination of dielectric and etch
stop layers that is taught by Chiang, et al. is the
combination of silicon dioxide and silicon nitride as
claimed by Chiang, et al. Aside from Chiang, et al.’s
teaching of adjacent silicon dioxide and silicon
nitride layers, Chiang, et al. does not provide any
guidance as to which etch stop layers are suitable for
specific dielectric layers [Request, page 2].
This contention is not well taken. Initially, it is
appropriate to clarify that we do not consider Chiang to suggest
that each and everyone of the etch stop layers disclosed therein
is suitable for each and everyone of the dielectric layers
disclosed therein, as indicated in the first sentence of the
appellants’ aforequoted contention. Instead, we simply find that
Chiang teaches using an etch stop layer adjacent a dielectric
layer wherein the etch stop layer comprises a variety of
materials including the silicon nitride layer used by Sugahara as
well as the silicon carbide layer claimed by the appellants (see
the paragraph bridging columns 14 and 15 of Chiang) and wherein
2
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