Appeal No. 2005-0188
Application No. 09/949,541
We agree with the examiner’s findings (answer, page 3) that
Spraggins discloses a semiconductor device that comprises a
substrate with at least one isolation structure, a trim resistor
structure on the isolation structure and at least one heating
structure on the isolation structure adjacent to the trim
resistor structure and separated from the trim resistor structure
by a heat conducting electrical conductor. Inasmuch as Spraggins
uses an intrinsic polysilicon layer 22 and a tungsten silicide
layer 23 as a trim resistor structure (Figure 1), we additionally
agree with the examiner’s finding (answer, page 3) that the trim
resistor structure in Spraggins does not comprise a doped
polysilicon resistor as required by the claims on appeal.
Turning to the teachings of Singh, we agree with the
examiner’s finding (answer, page 4) that “Singh discloses a trim
resistor structure comprising a doped polysilicon resistor (pp.
2, section [0024]).” Based upon the teachings of Singh, the
examiner is of the opinion (answer, page 4) that “[i]t would have
been obvious for one skilled in the art at the time of the
invention to use a doped polysilicon resistor element as
disclosed by Singh for the device of Spraggins for the purpose of
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