Appeal No. 2005-0202 Page 3
Application No. 09/348,654
1. A process for patterning a target layer, comprising the steps in sequence of:
a) preparing a semiconductor structure having said target layer covered with an etching
mask formed of photo-resist;
b) heating said semiconductor structure from step a) to an initial temperature of between
50 degrees centigrade and 100 degrees centigrade and exposing said semiconductor structure to
an etchant containing halogen so as to form said target layer into a pattern partially covered with
unintentional layers of etching residue containing pieces of said photo-resist and halide;
c) heating the resultant structure of step b), over a time period of 30 to 70 seconds, from
said initial temperature to a second temperature of between 100 degrees centigrade and 200
degrees centigrade and exposing the resultant structure of step b) to a gaseous mixture containing
ionic water vapor where at least one of H+ and OH exists so that said halide reacts with said at
least one H+ and OH; and
d) heating the resultant structure of step c) from said second temperature to a target
ashing temperature of between 200 degrees centigrade and 250 degrees centigrade and ashing
said photo-resist so as to remove said etching mask from the resultant structure of step c).
7. The process as set forth in claim 6, in which said etching gas further contains
hydrofluorocarbon expressed as CH4-xFx.
Appellant has not convinced us of reversible error on the part of the Examiner. We,
therefore, affirm. Our reasons follow.
OPINION
Claim 1
Claim 1 is directed to a process for patterning a target layer residing on a semiconductor
substrate. In this process, the target layer is masked with photo-resist (step a) and subjected to
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