Appeal No. 2005-0327
Application No. 09/389,826
situated remote from the well and forming a second
anode and cathode area of the SCR element, and
the gated diode contains a gate insulated from the
surface of the semiconductor body and a highly-doped
second conductivity type surface zone aligned to this
gate further denoted as second zone, which the second
zone partly overlaps the well of the second
conductivity type, characterized in that the said
second zone stretches out only along a part of the
periphery of the well, the first zone is provided along
at least another part of this periphery of the well
which is free from the said second zone, and an anode
and cathode of the SCR element in the first zone are
not shielded from one another by the gated diode.
The following reference is relied on by the examiner:
Ker et al. (Ker) 5,572,394 Nov. 5, 1996
Claims 1-6 and 9 stand rejected under 35 U.S.C. § 102(b) as
being anticipated by Ker. Claims 7 and 8 stand rejected under
35 U.S.C. § 103. As evidence of obviousness, the examiner relies
upon Ker alone.
Rather than repeat the positions of the appellants and the
examiner, reference is made to the brief (no reply brief has been
filed) for appellants’ positions, and to the answer for the
examiner’s positions.
OPINION
For the reasons set forth by the examiner in the answer, we
sustain the respective rejections under 35 U.S.C. § 102 and
35 U.S.C. § 103 of the claims on appeal.
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