Appeal No. 2005-0773
Application No. 09/517,987
To the extent dependent claims 87 and 90 are argued by
appellants at page 13 of the principal brief on appeal, the
figures in Hsu show that the respective source and drain regions
24 and 26 in the substrate have a doping level of N, whereas the
upward, extended regions of the source and drain regions adjacent
to the gate electrode are represented by N+, thus indicating
respective light dopings and comparatively heavier doping levels.
In view of the foregoing, the decision of the examiner
rejecting various claims on appeal under 35 U.S.C. § 102 and
35 U.S.C. § 103 is affirmed.
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