Appeal No. 2005-0811
Application No. 09/901,416
forming a second dielectric layer over said first dielectric
layer wherein the dielectric constant of the second dielectric
layer is less than 3.0;
forming a first hardmask layer over said second dielectric
layer;
forming a second hardmask layer on said first hardmask layer
wherein said second hardmask layer comprises a material selected
from the group consisting of titanium aluminide (TiAl), titanium
aluminum nitride (TiAlN), titanium nitride (TiN), aluminum
nitride (AlN), tantalum aluminide (TaAl), and tantalum aluminum
nitride (TaAlN);
forming a trench in said second dielectric; and
filling said trench with a conducting material.
The examiner relies upon the following references as
evidence of obviousness:
Blosse et al. (Blosse) 6,399,512 B1 June 4, 2002
(filed June 15, 2000)
Flanner et al. (Flanner) 6,410,437 B1 June 25, 2002
(filed June 30, 2000)
Appellants' claimed invention is directed to a method for
forming interconnects comprising first and second dielectric
layers and first and second hardmask layers on a silicon
substrate. The first hardmask layer may be SiN and the second
hardmask layer may be TiN.
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