Appeal No. 2005-0814
Application No. 10/036,323
The appealed claims are directed to an n-channel DMOS
(“double diffused” metal oxide semiconductor) transistor
structure.
Claim 14, the sole independent claim, is illustrative of the
subject matter embraced by the appealed claims:
14. An n-channel DMOS transistor source structure,
comprising:
an n-type source diffusion, ohmically connected to a
source metallization;
a p-type surface body diffusion which laterally
surrounds at least part of said source diffusion;
a conductive gate structure which is capacitively
coupled to part of said p-type surface body diffusion to
define a channel region therein;
a p-type buried body diffusion which underlies said
channel and at least part of said surface body diffusion;
and
an ohmic connection between said buried body
diffusion and said source metallization;
whereby said buried body diffusion diverts hole
current to bypass said source diffusion, and thereby reduces
emission of secondary electrons, and thereby increases the
safe operating area of the device.
The prior art references relied upon by the examiner are:
Mena et al. (Mena) 4,922,327 May 1, 1990
Huang 6,437,399 B1 Aug. 20, 2002
(effective filing date: Jun. 30, 1997)
2
Page: Previous 1 2 3 4 5 6 7 Next
Last modified: November 3, 2007