Appeal No. 2005-0864 Page 2
Application No. 09/859,0864
BACKGROUND
Appellant's invention relates to a buried channel field
effect transistor. A relaxed SiGe layer or a relaxed SiGe cap
layer are each located adjacent the channel layer. An ion
implanted dopant supply is maintained in at least one of the
aforementioned SiGe layers A further understanding of the
invention can be derived from a reading of exemplary claim 1,
which is reproduced below.
1. A buried channel FET comprising:
a substrate;
a relaxed SiGe layer;
a channel layer adjacent said related SiGe layer;
a SiGe cap layer adjacent said channel layer; and
an ion-implanted dopant supply in at least one of the
relaxed SiGe layer and the SiGe cap layer, the dopant supply
extending along said channel and having an ion-implanted dopant
profile.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Murakami et al. (Murakami) 5,241,197 Aug. 31, 1993
Chu et al. (Chu) 6,059,895 May 09, 2000
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