Appeal No. 2005-2351
Application No. 09/904,112
non-elected invention (claims 7, 13, 14, 16-21, 31-36, 51-56, 64-
72, 80-99 and 106; Brief, page 2). We have jurisdiction pursuant
to 35 U.S.C. § 134.
According to appellants, the invention is directed to a
method of making stabilized capacitors and DRAM (Dynamic Random
Access Memory) cells (Brief, page 2). Further details of the
present invention may be understood from representative
independent claim 1, as reproduced below:
1. A method of forming a capacitor comprising providing a
conductive oxide electrode, depositing a first layer of a high
dielectric constant oxide dielectric material on said conductive
oxide electrode, oxidizing said conductive oxide electrode and
said first layer of said high dielectric constant oxide
dielectric material under oxidizing condition such that at least
the surface of said conductive oxide electrode is provided with
enough oxygen to provide stability with said first layer of high
dielectric constant oxide dielectric material, depositing a
second layer of said high dielectric constant oxide dielectric
material on said first layer of said high dielectric constant
oxide dielectric material, and depositing an upper layer
electrode on said second layer of said high dielectric constant
oxide dielectric material.
Appellants state that the claims do not stand or fall
together (Brief, page 4). Accordingly, to the extent appellants
present reasonably specific, substantive reasons for the separate
patentability of individual claims, we consider these claims
separately. See 37 CFR § 1.192(c)(7)(2003); In re McDaniel, 293
F.3d 1379, 1383, 63 USPQ2d 1462, 1465 (Fed. Cir. 2002).
2
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