Ex Parte Wu et al - Page 6



          Appeal No. 2005-2522                                       Page 6           
          Application No. 09/841,453                                                  

          Concerning that claim requirement for a hydrophobic coating                 
          formed using an oligomer/polymer surface modification agent, the            
          examiner turns to the additional teachings of Grainger, including           
          those referred to at page 4 of the answer.  In this regard,                 
          Grainger discloses, inter alia, the formation of films for                  
          imparting hydrophobic substrate surface properties using                    
          polymeric materials that react with surface hydroxyl groups.                
          Grainger informs one of ordinary skill in the art that the films            
          can be formed on structures that are microporous, including such            
          microporous structures used in microelectronics.  Grainger                  
          teaches or suggests that the film chemisorbs (reacts) with                  
          surfaces containing oxygen or hydroxyl groups, including                    
          dielectric coated semiconductor wafers.  See, e.g., column 3,               
          lines 12-28, column 4, line 19 through column 5, line 51, column            
          12, line 51 through column 13, line 30, and column 14, lines 34-            
          67 of Grainger.                                                             
               Given the above-noted teachings of Grainger with respect to            
          the use of polymer surface modification to form a hydrophobic               
          surface coating for a porous microelectronic device, we agree               
          with the examiner that it would have been obvious to one of                 
          ordinary skill in the art to employ such a surface coating for              
          the nanoporous silica dielectric of Jin.  After all, Jin is                 





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