Appeal No. 2006-0318
Application No. 10/195,271
the gate materials either have different crystalline structures or
one gate material is crystalline and the other is amorphous
(specification, page 7). Claim 1 is illustrative:
1. An integrated circuit, comprising:
(a) a substrate with NMOS and PMOS transistors;
(b) wherein said NMOS transistors have gates made of
a first gate material with a first texture directly
adjacent gate dielectric; and
(c) wherein said PMOS transistors have gates made of
said first gate material with a second texture
directly adjacent gate dielectric, said first
texture and said second texture differing.
THE REFERENCES
Iwase et al. (Iwase) 5,097,311 Mar. 17, 1992
Liang et al. (Liang) 6,130,123 Oct. 10, 2000
Hsu 6,258,643 Jul. 10, 2001
THE REJECTIONS
The claims stand rejected as follows: claims 1 and 5 under
35 U.S.C. § 102(b) as anticipated by Hsu; claims 2 and 3 under
35 U.S.C. § 103 as obvious over Hsu in view of Lang; and claim 4
under 35 U.S.C. § 103 as obvious over Hsu in view of Iwase.
OPINION
We affirm the rejection of claims 1 and 5 and reverse the
rejections of claims 2-4.
Claims 1 and 5
Hsu discloses an integrated circuit comprising an NMOS
transistor having an N -type polysilicon gate (21A) and a PMOS+
2
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