Appeal No. 2006-1751
Application No. 09/778,872
BACKGROUND
The invention relates to a wafer that comprises a plurality of acoustic wave
devices. Components are modified to adjust for variations in wafer material (e.g.,
thickness). Representative claim 24 is reproduced below.1
24. A wafer having a plurality of acoustic wave devices formed thereon and exhibiting
common operational characteristics, each of said acoustical wave devices
manufactured according to a method comprising:
(a) forming a ground electrode on the wafer which is intended to be placed on
top of a semiconductor substrate;
(b) forming a piezoelectric thin film on top of the ground electrode, wherein the
piezoelectric thin film varies in at least one characteristic across the wafer; and
(c) forming at least one upper electrode on top of the piezoelectric thin film,
wherein at least the ground electrode, the piezoelectric thin film and the at least
one upper electrode form components, as a result of steps (a)-(c), in each of the
plurality of acoustical wave devices, and
wherein at least one component in some of the plurality of acoustical wave
devices is modified in its operational characteristic to compensate for the variation in the
at least one characteristic of the piezoelectric thin film and is based on the location of
the at least one acoustical wave device on the wafer.
The examiner relies on the following references:
Curran et al. (Curran) 3,401,275 Sep. 10, 1968
1 We observe that “the at least one acoustical wave device on the wafer” lacks proper antecedent
basis in the claim.
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