Appeal No. 2006-2210
Application 09/944,230
Representative claim 1 is reproduced below:
1. a semiconductor device structure, comprising:
a substrate including at lest one recess formed therein; and
a material layer disposed over the substrate and substantially filling the at
least one recess, the material layer having a surface substantially free of hills
and valleys.
The following references are relied on by the examiner:
Dennison et al. (Dennison) 5,663,090 Sep. 2, 1997
Kikuchi et al. (Kikuchi) 6,278,153 Aug. 21, 2001
(Filed Oct. 19, 1999)
Yates et al. (Yates) 6,358,793 Mar. 19, 2002
(Filed Feb. 26, 1999)
Wang 6,461,932 Oct. 8, 2002
(Filed Dec. 14, 1998)
Claims 15 through 20, 23 and 24 stand rejected under 35 U.S.C.
§ 102(e) as being anticipated by Yates. Similarly, claims 1, 3, 11 through
13, 21 and 22 stand rejected under 35 U.S.C. § 102(e) as being anticipated
by Kikuchi. Correspondingly, claims 1, 15, 16 and 21 through 24 stand
rejected under 35 U.S.C. § 102(e) as being anticipated by Wang. Kikuchi
and Dennison are utilized by the examiner within 35 U.S.C. § 103 to reject
claim 4.
2
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