Appeal No. 2006-2922 Page 3
Application No. 10/012,677
o forming a patterned conductive material over the insulating
layer of silicon-doped porous aluminum oxide; and
o forming a pair of conductive source/drain regions by implanting
dopant into the substrate through the silicon-doped porous
aluminum oxide, the pair of source/drain regions being spaced
from one another by the patterned conductive material; the
conductive material defining a transistor gate between the
source/drain regions.
THE REFERENCES
The examiner relies on the following references:
Fujisada JP 60-167352 Aug. 30, 1985
Lee et al. (Lee) 5,923,056 July 13, 1999
Suh 6,093,612 July 25, 2000
• Vossen et al. (Vossen), “Thin Film Processess II”, Academic Press
Inc., Boston, 1991, pages 80-81, 108-110, 113-115, 188, and 200.
• Wolf, Stanley et al (Wolf-1), “Silicon Processing For The VLSI Era Vol.
1: Process Technology”, Lattice Press, Sunset Beach Ca., 1986,
pages 5 and 323.
• Wolf, Stanley (Wolf-2), “Silicon Processing For The VLSI Era Vol. 2:
Process Integration”, Lattice Press, Sunset Beach Ca., 1990, pages
332, 333 and 354-356.
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Next
Last modified: November 3, 2007