Appeal No. 95-0142
Application 07/817,961
APPENDIX
25. A method of plasma-etching a wafer by using an
apparatus comprising a processing vessel, wafer supporting means
provided in the vessel and having a wafer mounting surface,
cooling means for cooling the wafer mounting surface, and means
for forming a radio-frequency electric field in the vessel, said
method comprising the steps of:
loading a wafer on the mounting surface;
etching the wafer by forming a radio-frequency electric
field in the vessel and supplying an etching gas into the vessel
after loading the wafer, thereby exciting the plasma of the
etching gas;
cooling the wafer by the cooling means through the mounting
surface during the etching;
stopping the etching by ending supply of the etching gas and
the forming of the radio-frequency electric field;
beginning supply of an inactive gas into the vessel in
synchronism with said ending of the supply of the etching gas;
exhausting the vessel during said supply of the inactive
gas, and creating a flow of the inactive gas on the wafer and the
mounting surface;
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