Ex parte ONISHI et al. - Page 2




         Appeal No. 1998-2948                                                      
         Application 08/400,861                                                    

              This is a decision on appeal under 35 U.S.C. § 134 from              
         the final rejection of claims 1-6.                                        
              We affirm.                                                           
                                    BACKGROUND                                     
              The invention relates to a method of manufacturing an                
         active matrix liquid crystal display (LCD) which comprises, in            
         part, anodic-oxidizing part or all of an                                  
         interconnect/electrode film formed of an aluminum alloy                   
         containing at least one rare earth element and having a                   
         thickness of 200 Å or more.                                               
              Claim 1 is reproduced below.                                         
                   1.  A method of manufacturing an active matrix                  
              liquid crystal display having an interconnect film and a             
              switching element, comprising:                                       
                   forming an interconnect/electrode film on a                     
              substrate by physical vapor deposition;                              
                   patterning said interconnect/electrode film; and                
                   anodic-oxidizing part or all of said                            
              interconnect/electrode film;                                         
                   wherein said interconnect/electrode film is formed              
              of an Al alloy containing at least one element selected              
              from the group consisting of rare earth elements in an               
              amount of 0.1 to 10 at%; and                                         
                   the thickness of said anodic oxidation film is in               
              the range of 200Å or more.                                           

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