Ex parte ONISHI et al. - Page 5




         Appeal No. 1998-2948                                                      
         Application 08/400,861                                                    

              Joshi discloses that aluminum and its alloys, such as                
         Al-Cu, have been the most common choices for metallization of             
         silicon based integrated circuits, but that most solute                   
         additions to metals such as aluminum decrease its electrical              
         conductivity (p. 1480, left col.).  Joshi states (p. 1480,                
         left col.): "Addition of elements with low solid solubility is            
         an approach to achieve metallization with improved                        
         characteristics without undue deterioration in electrical                 
         conductivity."  Joshi further states (p. 1480, left col.):                
         "Many rare earth elements such as Ce and Sm have relatively               
         low solid solubilities in aluminum and are potential                      
         beneficiaries to the metallization system when added in small             
         quantities."  Joshi discloses an Al-1 wt% (0.29 at%) Sm                   
         metallization alloy which is sputter deposited.  The "Al-Sm               
         metallization exhibits very favorable properties, namely, low             
         resistivity and good thermal stability including hillock                  
         growth resistance, for potential integrated circuit                       
         applications" (abstract).                                                 
              Yamamoto discloses electrodes for semiconductors which               
         resist hillock formation and have a specific resistance of                
         20 µS·cm or below which can be used as electrodes for                     

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