Appeal No. 95-0926
Application 08/026,222
This is a decision on appeal from the final rejection
of claims 9, 10 and 12 through 18, all of the claims pending in
the application.
The invention is directed to a semiconductor device.
More particularly, a negative surface potential is provided on an
exposed surface of the semiconductor between the gate electrode
and the source and/or drain. The surface is then covered with a
passivating layer. It is disclosed that by incorporating an
electro-negative species into the semiconductor surface, the
negative charge in the surface can be maintained after
passivation, thus minimizing reductions in reverse breakdown
voltage.
Representative independent claim 9 is reproduced as
follows:
9. A field effect transistor comprising:
a substrate supporting an active layer comprising a
Group III-V material having a dopant concentration with a source
electrode and a drain electrode disposed thereover and with a
gate electrode disposed between said source and drain electrodes
in Schottky barrier contact to said active layer;
a surface layer portion of said active layer having
anions to provide a negatively charged surface potential disposed
between said drain and gate electrodes comprised of said Group
III-V material and oxygen having a thickness in the range of 25D
to 35D ; and
a layer of passivation material disposed at least on
said surface layer portion of said active layer.
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