Appeal No. 95-2063
Application 07/965,314
APPENDIX
12. A process for making a semiconductor device comprising
the steps of:
providing a spin-on-glass having a composition consisting
essentially of:
a) between approximately 15% to 22% by volume of
tetraethylorthosilicate;
b) an amount of nitric acid equivalent to between
approximately 0.2% to 1.3% by
volume of 70% by weight nitric
acid;
c) between approximately 70% to 85% by volume of
alcohol; and
d) balance water;
providing a semiconductor substrate;
coating the semiconductor substrate with the spin-on-glass;
and heating the coated semiconductor substrate in order
to densify
the spin-on-glass.
13. A process of claim 12 wherein the step of providing a
spin-on-glass comprises providing a spin-on-
glass having between approximately 70% to 85%
by volume of isopropyl alcohol.
16. The process of claim 12 wherein the step of providing a
spin-spin-on-glass further comprises providing aon-glass having
a composition
consisting
essentially of:
a) between approximately 16.8% to 19.0% by volume of
tetraethylorthosilicate;
1
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Next
Last modified: November 3, 2007