Ex parte SCHLANGENOTTO et al. - Page 3




          Appeal No. 96-0341                                                          
          Application 08/005,760                                                      


          1.  A power diode, comprising:                                              
          at least one semiconductor body having a base zone of a first               
          conductivity type and a given doping level, a cathode zone of the           
          first conductivity type and a doping level higher than the given            
          doping level, and an anode zone of a second conductivity type               
          opposite the first conductivity type and a doping level higher              
          than the given said base zone having at least a first region with           
          a first predetermined thickness and being dimensioned for a given           
          blocking voltage and a second region with a second thickness                
          being greater than the first predetermined thickness by at least            
          a factor of 1.4;                                                            
          the first region forming a base zone of a first diode and the               
          second region forming a base zone of a second diode, said first             
          diode having a first area and a first minority carrier lifetime,            
          the second diode having a second area and a second minority                 
          carrier lifetime, said areas being dimensioned such that a                  
          forward current flowing through said first diode is greater than            
          a forward current flowing through said second diode by at least a           
          factor of 2.                                                                
               The reference relied on by the examiner is:                            
          Naito et al. (Naito)             0,103,138          Nov. 19, 1987           
          (European Patent Specification)                                             
               Claims 1, 2 and 4 through 12 stand rejected under 35 U.S.C.            
           102(b) as being anticipated by Naito.                                     
               Claims 1, 13 and 14 stand rejected under 35 U.S.C.  103 as            
          being unpatentable over Naito.                                              
               Reference is made to the brief and the answer for the                  
          respective positions of the appellants and the examiner.                    
                                       OPINION                                        
               We have carefully considered the entire record before us,              
          and we will reverse all of the rejections.                                  

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