Appeal No. 96-0341
Application 08/005,760
1. A power diode, comprising:
at least one semiconductor body having a base zone of a first
conductivity type and a given doping level, a cathode zone of the
first conductivity type and a doping level higher than the given
doping level, and an anode zone of a second conductivity type
opposite the first conductivity type and a doping level higher
than the given said base zone having at least a first region with
a first predetermined thickness and being dimensioned for a given
blocking voltage and a second region with a second thickness
being greater than the first predetermined thickness by at least
a factor of 1.4;
the first region forming a base zone of a first diode and the
second region forming a base zone of a second diode, said first
diode having a first area and a first minority carrier lifetime,
the second diode having a second area and a second minority
carrier lifetime, said areas being dimensioned such that a
forward current flowing through said first diode is greater than
a forward current flowing through said second diode by at least a
factor of 2.
The reference relied on by the examiner is:
Naito et al. (Naito) 0,103,138 Nov. 19, 1987
(European Patent Specification)
Claims 1, 2 and 4 through 12 stand rejected under 35 U.S.C.
§ 102(b) as being anticipated by Naito.
Claims 1, 13 and 14 stand rejected under 35 U.S.C. § 103 as
being unpatentable over Naito.
Reference is made to the brief and the answer for the
respective positions of the appellants and the examiner.
OPINION
We have carefully considered the entire record before us,
and we will reverse all of the rejections.
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