Ex parte SCHLANGENOTTO et al. - Page 4




          Appeal No. 96-0341                                                          
          Application 08/005,760                                                      


               The examiner indicates (Final rejection, pages 3 and 4) that           
          Figure 3 in Naito discloses a semiconductor diode that comprises:           
          a base zone 42 of a first conductivity type [n-], and of a given            
          doping level; a cathode zone 51 of the first conductivity type              
          [n+], and of a doping level higher than the given doping level;             
          an anode zone 31 and 32 of a second conductivity type [p and p+,            
          respectively] opposite to the first conductivity type, and of a             
          doping level higher than the given doping level; a first region             
          [between zone 32 and the interface of zones 41 and 42] with a               
          first predetermined thickness [3Ám], and being "inherently                  
          dimensioned for a given blocking voltage;" and a second region              
          [between zone 31 and the interface of zones 41 and 42] with a               
          second thickness [6Ám] being greater than the first predetermined           
          thickness by at least a factor of 1.4.  According to the examiner           
          (Final rejection, page 4), "the first region forming a base zone            
          of a first diode (II) and the second region forming a base zone             
          of a second diode (I), said first diode having a first area and a           
          first minority carrier lifetime, the second diode having a second           
          area and a second minority carrier lifetime, said area being                
          inherently dimensioned such that forward current flowing through            
          said first diode is greater than a forward current flowing                  
          through said second diode by at least a factor of 2."  In other             

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