Appeal No. 96-0341
Application 08/005,760
The examiner indicates (Final rejection, pages 3 and 4) that
Figure 3 in Naito discloses a semiconductor diode that comprises:
a base zone 42 of a first conductivity type [n-], and of a given
doping level; a cathode zone 51 of the first conductivity type
[n+], and of a doping level higher than the given doping level;
an anode zone 31 and 32 of a second conductivity type [p and p+,
respectively] opposite to the first conductivity type, and of a
doping level higher than the given doping level; a first region
[between zone 32 and the interface of zones 41 and 42] with a
first predetermined thickness [3µm], and being "inherently
dimensioned for a given blocking voltage;" and a second region
[between zone 31 and the interface of zones 41 and 42] with a
second thickness [6µm] being greater than the first predetermined
thickness by at least a factor of 1.4. According to the examiner
(Final rejection, page 4), "the first region forming a base zone
of a first diode (II) and the second region forming a base zone
of a second diode (I), said first diode having a first area and a
first minority carrier lifetime, the second diode having a second
area and a second minority carrier lifetime, said area being
inherently dimensioned such that forward current flowing through
said first diode is greater than a forward current flowing
through said second diode by at least a factor of 2." In other
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