Appeal No. 96-3296
Application 08/145,267
be directed to allowable subject matter and stand objected to as
relying on a rejected parent claim.
The invention pertains to providing an integrated
circuit coupling a silicon-based transistor with a silicon-based
resonant tunneling diode having tunneling barriers including an
amorphous silicon-oxygen compound.
Independent claim 5 is reproduced as follows:
5. An integrated circuit, comprising:
(a) a silicon-based transistor; and
(b) a silicon resonant tunneling diode with tunneling
barriers including an amorphous silicon-oxygen compound, said
diode coupled to said transistor.
The examiner relies on the following references:
Tanoue et al. (Tanoue) 5,229,623 Jul. 20, 1993
European patent (Suematsu) 0194061 Sep. 10, 1986
Japanese patent (Iwamatsu) 63-124467 May 27, 1988
Claims 5, 8 and 9 stand rejected under 35 U.S.C. 103 as
unpatentable over Tanoue, Iwamatsu and Suematsu.
Reference is made to the brief and answer for the
respective positions of appellant and the examiner.
OPINION
We reverse.
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