Appeal No. 96-3296
Application 08/145,267
he relies on for such a teaching. We find no evidence in the
applied references of "a silicon resonant tunneling diode with
tunneling barriers including an amorphous silicon-oxygen
compound," as claimed. At the bottom of page 3 of the answer,
the examiner also contends that "from Suematsu it is shown that
amorphous silicon oxide tunneling insulator [sic] would have been
clearly obvious tunneling insulator material" but, again, there
is no indication from the examiner as to what portion or portions
of Suematsu are relied on for such a teaching. It is unclear to
us how the examiner is construing the "artificial semiconductors"
of Suematsu to somehow suggest the claimed silicon resonant
tunneling diode with tunneling barriers including an amorphous
silicon-oxygen compound.
We agree with appellant, at page 4 of the brief, that
if Iwamatsu and/or Suematsu were combined with Tanoue,
...the result would be either a field
effect transistor plus an induced
potential well field effect transistor
(Iwmatsu [sic, Iwamatsu]) or a field
effect transistor plus a junction diode
of "artificial semiconductor" materials
which could give resonant conduction
behavior (Suematsu). But neither of
these would suggest the silicon based
resonant tunneling with amorphous
tunneling barriers as required by
independent claim 5 and its dependent
claims...
-4-
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