Appeal No. 94-3910
Application No. 07/966,615
DECISION ON APPEAL
BACKGROUND
This is a decision on the appeal under 35 U.S.C. § 134
from the examiner’s rejection of claims 21-28, which
constitute all the claims remaining in the application.
Claims 22-28 ultimately depend from claim 21.
The invention pertains to Erasable Programmable Read
Only Memory (EPROM) semiconductor devices and their
fabrication.
Independent claim 21 is reproduced as follows:
21. An array of rows and columns of memory cells
comprising:
a substrate having a first conductivity type;
a plurality of source/drain regions formed in the surface
of said substrate, said source/drain regions having a second
conductivity type opposite said first conductivity type and
said source/drain regions extending at least between two
adjacent rows of memory cells of said array;
a plurality of field insulating regions formed on a
portion of the surfaces of said source/drain regions;
a plurality of slots etched in said field insulating
regions, said slots exposing the surface of said source/drain
regions and extending the length of said source/drain regions
and extending at least between two adjacent rows of memory
cells of said array;
3
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