Appeal No. 95-0326
Application No. 07/877,253
remaining in the application have been indicated by the examiner
as being either allowed or allowable.
The subject matter on appeal relates to a process for
forming a thermally stable, low resistance ohmic contact on a
major surface of a III-V semiconductor substrate comprising the
steps of (a) doping to form an active region to which the ohmic
contact is to be made, (b) introducing a Group VI element onto
the surface of the active region to form treated portions
comprising a thin film at most a few monolayers thick, (c)
forming a metal contact on the treated portions and (d) heating
the metal contact to form said low resistance ohmic contact.
This appealed subject matter is adequately illustrated by
independent claim 28 which reads as follows:
28. A process for forming a thermally stable, low
resistance ohmic contact on a major surface of a III-V
semiconductor substrate, comprising:
(a) doping at least one region in said major surface of
said III-V semiconductor substrate with a dopant to form an
active region to which said ohmic contact is to be made;
(b) introducing a Group VI element onto the surface of said
at least one active region to form treated portions of said III-V
surface of said at least one active region, said treated portions
comprising a thin film at most a few monolayers thick;
(c) forming a metal contact, capable of forming an ohmic
contact to said III-V semiconductor, on said treated portions of
said III-V surface to form a metal contact thereto; and
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