Appeal No. 95-2928
Application No. 07/769,185
channels, where they perform their useful function of
solving the hot electron effect problem, as was known in
the prior art. Additionally, however, the HALO implant
is excluded from other portions of the active regions
such that junction capacitances are lowered in those
regions, resulting in faster switching speed.
Representative independent claim 18 is reproduced as
follows:
18. A field effect transistor for an integrated
circuit device, comprising:
a substrate region having a first conductivity type;
a gate electrode over said substrate region;
lightly doped drain regions in said substrate region
adjacent said gate electrode, said lightly doped drain
regions having a second conductivity type;
heavily doped source/drain regions having the second
conductivity type in said substrate region adjacent said
lightly doped drain regions; and
halo regions having the first conductivity type
within said substrate region adjacent said gate electrode
and extending a relatively short distance into said
source/drain regions, wherein those portions of said
source/drain regions which are spaced further from said
gate electrode than the relatively short distance do not
contain the first conductivity type dopant used to form
the halo regions.
The examiner relies on the following references:
Liou et al. (Liou) 4,771,014 Sep. 13, 1988
Bergonzoni 4,968,639 Nov. 6, 1990
1 Application for patent filed September 30, 1991.
2
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