Appeal No. 95-4963
Application No. 08/151,589
The subject matter on appeal is directed to a method of
manufacturing a ferroelectric layer of bismuth-titanate having
formula Bi Ti O on a substrate. This subject matter is
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adequately illustrated in independent claim 19 which is
reproduced below:
19. A method of manufacturing a ferroelectric layer of
bismuth-titanate Bi Ti O on a substrate, said method
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comprising the steps of
a) forming a stoichiometric mixture of bismuth and
titanium in the form of either a metallo-organic compound or a
metallo-inorganic compound or both mixed in an organic
solvent,
b) homogeneously mixing said compounds in the solvent,
c) applying said solution to a substrate,
d) thermally treating said solution at reaction
temperatures ranging from 500EC to 650EC in a vacuum free
atmosphere so that, a layer of bismuth-titanate Bi Ti O is
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formed on said substrate to a thickness of about 0.1 to 2 Fm.
The references relied on by the examiner are:
Bardhan et al. (Bardhan) 5,004,713 Apr.
2, 1991
Yi et al. (Yi), “Sol-Gel Processing of Complex Oxide Films,”
Ceramic Bulletin, Vol. 70, No. 7 (1991) pp. 1173-1179
(hereinafter referred to as “Yi”).
The appealed claims stand rejected as follows:
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