Appeal No. 95-5110
Application 07/918,954
Therefore, claims 2 through 4, 7 and 10 through 12 are pending
and stand rejected.
The invention is directed to field effect transistors in
which the transistor gate is located in a trench in a
substrate having a lightly doped epitaxal layer at the
principal surface of the substrate. Appellants disclose on
pages 4 and 5 of the specification that Figure 2 shows a cross
section of a field effect transistor in accordance with the
invention. In particular, Figure 2 shows a conventional
heavily doped N+ substrate 40 being a drain region, a first
epitaxial layer 42 of a N doped conductivity type formed on
the substrate 40, a second layer 46 of a N- doped conductivity
type formed on the first layer 42, a trench 54 in the second
layer 46 extending to within 0.5 Fm of the first layer 42, a
source region 52 of a N+ doped conductivity type formed in the
second layer 46 and a body region of a P doped conductivity
typed extending from the principle surface of the second layer
46 down to and into at least an upper portion of the first
layer 42 and being spaced apart from the lower portion of the
trench 54.
2
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