Appeal No. 95-5148 Page 2
Application 08/121,794
Figures 3 and 4 and is broadly represented by claim 1, the
sole independent claim:
An ohmic electrode structure having a layered
structure comprising:
a compound semiconductor;
an In Ga As layer (0 < x # 1) on said compound
x 1-x
semiconductor;
a metal layer including at least one metal
sublayer; and
a barrier layer between said metal layer and
said In Ga As layer for prevention of the diffusion
x 1-x
of metallic components between said metal layer and
said In Ga As layer;
x 1-x
said barrier layer being composed of a metallic
nitride having a high melting point and providing an
ohmic interface with said In Ga As layer.
x 1-x
The examiner rejected all of the claims on appeal as
unpatentable in view of the admitted prior art (Paper 1 at 1-
3; Figs. 1 & 2) and the following Japanese kÇkai:3
Yamagishi 62-213158 pub'd. 19 Sept. 1987
In the answer, the examiner also relied heavily on
Marc Wittmer, "Barrier layers: Principles and applications in
microelectronics", 2 J. Vac. Technol. 273-80 (Apr.-June 1984)
(Wittmer)
but the examiner never positively recited Wittmer as part of
the rejection. We, therefore, do not rely on Wittmer in
3 We rely on a translation (attached) for our
understanding of this reference.
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