Appeal No. 96-01612
Application 08/006,152
Claim 1 is illustrative of the subject matter on appeal and
reads as follows:
1. A method of producing a semiconductor device comprising:
a) forming a gate insulating film on a substrate at
a surface of a semiconductor region of the substrate, the
region being of a first conductivity type, and forming a
gate electrode on the gate insulating film;
b) evacuating a chamber at a pressure of less than
1 x 10 Pa;-4
c) removing an inert film from the substrate in the
chamber by a reduction reaction in order to expose an active
face on two sections of the semiconductor region spaced from
each other by the gate electrode;
d) applying to the surface of the substrate in the chamber
a gas containing an impurity component of a second conductivity
type while heating the substrate to a temperature greater than
800EC and not higher than a temperature of 825 EC to form an
impurity adsorption layer composed of impurity component atoms
or of a compound containing at least impurity component atoms
and constituting a diffusion source substantially only on the
active face, and introducing the impurity component atoms into
the semiconductor region of the first conductivity type from the
diffusion source to thereby form a first impurity layer of low
density in the surface of the two semiconductor region sections;
and
e) forming a second impurity layer having an impurity
density higher than that of the first impurity layer in each
section so that the second layer is contiguous to the first
impurity layer.
2
Page: Previous 1 2 3 4 5 6 7 Next
Last modified: November 3, 2007