Appeal No. 96-01612
Application 08/006,152
a substrate located adjacent to a gate electrode by a reduction
reaction under a pressure of less than 1 x 10 Pa to provide an-4
active face. See claims 1, 7, 23 and 24. An impurity adsorption
layer composed of an impurity component atom of a second
conductivity or of a compound containing impurity component atoms
of a second conductivity is formed substantially only on the
active face by applying a gas containing an impurity component on
the active face as the silicon substrate is heated between 800
and 825EC. Id. The impurity component is introduced into the
semi-conductor regions of the first conductivity using the
impurity adsorption layer as a diffusion source. Id.
In rejecting the appealed subject matter under 35 U.S.C.
§ 103, the examiner takes the position that it would have been
obvious to remove an inert film from particular regions of a
silicon substrate as taught by Tsunashima using the high vacuum
hydrogen (reducing) etching technique taught by either Nickl or
Schachameyer and then provide an impurity on the resulting active
face area as taught by Tsunashima using the chemical deposition
technique as taught by Ito. See Answer at pages 4-6. The
examiner relies on the admitted art for showing that “making LDD
and DDD devices are conventional in semiconductor processing and
that ion implantation is not an efficient method of forming a
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