Appeal No. 96-1512
Application 08/297,279
This is a decision on the appeal under 35 U.S.C. § 134
from the examiner’s rejection of claims 1-22, which constitute
all the claims in the application.
The disclosed invention pertains to a complementary
heterojunction semiconductor device. More specifically, the
invention is directed to the interconnection of first and second
resonant interband tunneling transistors (RITTs). The gates of
the first and second RITTs are made from different semiconductor
materials. The first gate material has a valence band having an
energy greater than a conduction band of the second gate
material.
Representative claim 1 is reproduced as follows:
1. A complementary heterojunction semiconductor device,
comprising:
a first resonant interband tunneling transistor having a
first gate of a first compound semiconductor type, a drain
coupled to said first gate, and a common output coupled to said
first gate; and
a second resonant interband tunneling transistor having a
second gate of a second compound semiconductor type, said second
gate coupled to said common output, and a source coupled to said
second gate, wherein said first compound semiconductor type has a
valence band having an energy greater than a conduction band of
said second compound semiconductor type when said complementary
heterojunction semiconductor device is in an unbiased state.
The examiner relies on the following references:
Aoki et al. (Aoki) 4,768,076 Aug. 30, 1988
Söderström et al. (Söderström) 5,113,231 May 12, 1992
2
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