Appeal No. 96-1512
Application 08/297,279
obviousness. Note In re Oetiker, 977 F.2d 1443, 1445, 24 USPQ2d
1443, 1444 (Fed. Cir. 1992).
Zhu is directed to a complementary heterojunction field
effect transistor (HFET). The Zhu HFET is designed to have a P-
channel quantum well and an N-channel quantum well separated by a
barrier layer. Zhu teaches that "[t]he particular materials for
P-channel quantum well 12 and N-channel quantum well 14 are
chosen because P-channel quantum well 12 must have a valence band
energy greater than conduction band energy of N-channel quantum
well 14" [column 3, lines 6-10]. The examiner relies on this
relationship between the P-channel and the N-channel materials in
Zhu to meet the similar relationship of the gate materials
recited in claim 1.
S�derstr�m is directed to a resonant interband tunneling
device in which the lateral layers of compound semiconductor
material and barrier layers are shown [Figures 16 and 19]. The
examiner states that "[t]he variation of embodiments as shown by
Soderstrom in combination with Zhu’s more general structure would
have been obvious to a skilled artisan in order to achieve proper
integration" [answer, page 3]. The examiner does not further
elaborate on this point. Aoki is cited to show the connection of
transistors and biases to implement an inverter operation.
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